C16401SK-51 has 1,272 x 1,104 pixels, a photo-sensitive area of 140 x 122.8mm, and uses cmos sensing with a GOS (gadolinium oxysulfide) scintillator. “This combination ensures optimal performance and reliability, even when used with x-ray tube voltages of up to 160kV, making it suitable for demanding imaging applications,” according to the company. It has two… [Read more]
The module, CXT-ICM3SA, was introduced at APEC earlier this year and combines a three-phase 1.2kV SiC mosfet bridge – rated at 340 to 550A depending on model – a driver board and a control board in a stack. The control board is built around Silicon Mobility’s OLEA T222 IC which has lock-step Arm Cortex-R5F processing…. [Read more]
